Enhancing GaN HEMT Performance for Power Electronics Applications with Atomic Scale Processing Production Solutions​

SEMICON Taiwan 2022 功率暨光電半導體論壇 | NExT Forum

【講者】 Mr. Klaas Wisniewski Executive Director​, Plasma Technology Oxford Instruments
(現場Q & A) Mr. Ian Wright,VP Sales Business Development Asia,Oxford Instruments
【講題】Enhancing GaN HEMT Performance for Power Electronics Applications with Atomic Scale Processing Production Solutions​
【摘要】 GaN HEMTs for power electronics applications is projected to be a multi billion-dollar industry by 2030 and is a critical enabling technology in some very high growth markets like automated vehicles and datacentres. There are multiple device geometries and production routes to achieving more efficient, higher operating temperature, smaller, lighter and lower cost power semiconductors.​ Our solutions of device types – pGaN HEMTs and GaN MISHEMTs. In this presentation, Oxford Instruments will:
​ • Focus on our atomic layer processing solutions to create both next-generation GaN power devices. ​
• The newest developments for our atomic layer deposition low damage, high-quality dielectrics and passivation layers.​
• Our technology solutions for accurate, controlled atomic layer etch for pGaN HEMTs and GaN MISHEMTs developed with our collaboration partners.

【詳細議程】https://forum.hh-ri.com/20220915/
Organizer:鴻海研究院、SEMI
Co-Organizer:財團法人人工智慧科技基金會
Sponsor: AIXTRON SE、BENEQ、GaN Systems Inc.、漢民、IQE、KLA Corporation、Oxford Instruments、United Microelectronics Corporation、WIN Semiconductors Corp.

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