In this study, high −3 dB−3 dB bandwidth yellow-green InGaN/GaN micro-LEDs grown on polar c-plane GaN substrates are realized by using nanoporous distributed Bragg reflectors, which can increase light extraction efficiency and serve as strain-relaxed buffers to mitigate the quantum-confined Stark effect, resulting in improved external quantum efficiency. Moreover, atomic layer deposition technology is introduced for surface defect passivation, thereby reducing the leakage current. As a result, the device exhibits the highest −3 dB−3 dB bandwidth up to 442 MHz and a data transmission rate of 800 Mbit/s at a current density of 2.5 kA/cm22.5 kA/cm2 with on–off keying modulation, and holds great promise for future high-speed visible light communication applications.