Electrical Properties and Device Performance of Ultra Wide Bandgap Ga₂O₃ Grown on SapphireSubstrates
SEMICON Taiwan 2024
Power and Opto Semiconductor Forum | NExT Forum
Driving the Future: Technical Advancements and Market Trends in Adopting RF, Power, Optical and Diverse Applications
Topic: Electrical Properties and Device Performance of Ultra Wide Bandgap Ga₂O₃ Grown on Sapphire Substrates
Speaker: 武東星教授 國立暨南國際大學