Electrical Properties and Device Performance of Ultra Wide Bandgap Ga₂O₃ Grown on SapphireSubstrates

SEMICON Taiwan 2024

Power and Opto Semiconductor Forum | NExT Forum

Driving the Future: Technical Advancements and Market Trends in Adopting RF, Power, Optical and Diverse Applications

Topic: Electrical Properties and Device Performance of Ultra Wide Bandgap Ga₂O₃ Grown on Sapphire Substrates

Speaker: 武東星教授 國立暨南國際大學

Post Date

September 20, 2024